RF Transistors

The Infineon RF Bipolar Transistors in standard SOT, flatlead TSFP and new leadless ultra miniature TSLP packages are excellent choice for a wide range of RF and Wireless applications.

Applied as LNA (Low Noise Amplifier) they significantly improve the overall performance of the total RF system, e.g. extend the antenna range. Our drivers and medium power RF Transistors perfectly fit in applications like generic RF front-ends or active antennas up to 6 GHz.

New innovative additions in the portfolio like BFP460 or BFP540ESD integrate ESD protection up to 1.5kV (up to 10x better than similar competition product!). High ESD immunity combined with unmatched RF Performance make them unique on the market and beneficial for the customers.
 

Typical Application: Active Antenna  (see "Related Links" for more Application Examples)
 

Infineons G.P. RF Transistors BFR100 to 300series cover all kinds of ISM band radios up to 1GHz operation frequency. BFP400,500 and the BFP600series (SiGe) and new BFP700series SiGe:C transistors are suitable for use in a wide variety of applications to frequencies well beyond 6GHz. Overall applications include LNAs, microwave oscillators, and general purpose amplifiers for various standards e.g. RKE, TPMS, GPS, Wireless LAN (802.11a, b, g, n), WiMAX, Cordless Phones, UWB, Satellite TV LNB and Satellite-based broadcast services (e.g. XM Radio, Sirius, DAB).With BFR700L3RH series the best in class SiGe RF Technology is mounted in the smallest industrial available package with a height of 0.32mm - ideal for RF module.