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RF Power



New GaN RF Power Transistors for Cellular Infrastructure Applications

Building on our extensive cellular infrastructure experience and expertise, Infineon introduces a new family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors which enable cellular amplifier designers to build smaller, more powerful and more flexible transmitters.

Key Features:

  • 70 W to 170 W (P3dB)
  • 1800 MHz to 2700 MHz
  • High efficiency
  • Broadband capability

Please click here for more information on our cellular GaN HEMT products

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New GaN L-Band RADAR Products
Infineon introduces a new family of rugged GaN HEMT transistors for L-Band RADAR and commercial avionics applications.

  • GTVA123501FA
    - 1200 to 1400 MHz
    - P 3dB = 370 W
    - Efficiency = 70%
    - Gain = 18 dB
  • GTVA104001FA
    - 960 to 1215 MHz
    - P 3dB = 410 W
    - Efficiency = 70%
    - Gain = 18.5 dB

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RF Power Transistors for Cellular Infrastructure
Infineon provides solutions that address key requirements of today’s cellular communication systems: wide signal bandwidth, DPD linearization, high efficiency and compact designs.

Key Features:

  • 28 V and 50 V process technology
  • Broadband designs
  • Wide video bandwidth
  • Compact Doherty designs
  • High performance package technology with copper head slugs

wireless antenna

 

Communications / High Power Pulsed Application
Our RF Power technology portfolio provides the most advanced solutions for today’s communications amplifiers and the most rugged and stable devices in pulsed applications.

Key Features:

  • 450 MHz to 2700 MHz
  • Power levels from 4 W to 1000 W
  • High ruggedness
  • High RF consistency
  • Specialized solutions for RADAR, commercial avionics, broadcast and ISM applications

Antenna-red-200x200

 

 


RF Power


Featured Product
5W & 10W Unmatched RF Power Transistors

20 W & 40 W Cellular Systems Doherty Solutions for 1800/1900 MHz Bands

  • PXAC182002FC (For 20 W Systems)  
    Typical Doherty RF Characteristics: 
    • P OUT = 28 W avg
    • Gain = 16.5dB
    • Efficiency = 51%
    • Signal: 1C WCDMA
  • PXAC192908FV (For 40W Systems)
    Typical Doherty RF Characteristics
    • P OUT = 70W avg
    • Gain: 14dB
    • Efficiency: 49%
    • Signal: 1C WCDMA

RF Power

Application Notes

Title Size Date Version
446 KB 01 Sep 2013 01_00
861 KB 16 Oct 2014 01_00
635 KB 06 Mar 2012
1.4 MB 20 Oct 2009 01_00

Product Brochure

Title Size Date Version
718 KB 24 May 2015 05_00

RF Power

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