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New GaN L-Band Radar Products 
Infineon has introduced several new family member to its line of rugged GaN/SiC HEMT transistors for L-Band radar and commercial avionics applications.

- 1200 to 1400 MHz
- P 3dB = 610 W
- Efficiency = 70%
- Gain = 18 dB

- 960 to 1215 MHz
- P 3dB = 750 W
- Efficiency = 70%
- Gain = 17 dB


Other GaN/SiC products for radar and commercial avionics applications:  

- 1200 to 1400 MHz
- P 3dB = 370 W
- Efficiency = 70%
- Gain = 18 dB

- 960 to 1215 MHz
- P 3dB = 410 W
- Efficiency = 70%
- Gain = 18.5 dB



New GaN RF Power Transistors for Cellular Infrastructure Applications

Building on our extensive cellular infrastructure experience and expertise, Infineon introduces a new family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors which enable cellular amplifier designers to build smaller, more powerful and more flexible transmitters.

Key Features:

  • 70 W to 170 W (P3dB)
  • 1800 MHz to 2700 MHz
  • High efficiency
  • Broadband capability













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RF Power Selection Guide



RF Power Solutions for radar, commercial avionics, ISM & broadcast applications


Featured Product
5W & 10W Unmatched RF Power Transistors

20 W & 40 W Cellular Systems Doherty Solutions for 1800/1900 MHz Bands

  • PXAC182002FC (For 20 W Systems)  
    Typical Doherty RF Characteristics: 
    • P OUT = 28 W avg
    • Gain = 16.5dB
    • Efficiency = 51%
    • Signal: 1C WCDMA
  • PXAC192908FV (For 40W Systems)
    Typical Doherty RF Characteristics
    • P OUT = 70W avg
    • Gain: 14dB
    • Efficiency: 49%
    • Signal: 1C WCDMA

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