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New GaN L-Band Radar Products 
Infineon has introduced several new family member to its line of rugged GaN/SiC HEMT transistors for L-Band radar and commercial avionics applications.

GTVA126001FC
- 1200 to 1400 MHz
- P 3dB = 610 W
- Efficiency = 70%
- Gain = 18 dB

GTVA107001FC
- 960 to 1215 MHz
- P 3dB = 750 W
- Efficiency = 70%
- Gain = 17 dB

 

Other GaN/SiC products for radar and commercial avionics applications:  

GTVA123501FA
- 1200 to 1400 MHz
- P 3dB = 370 W
- Efficiency = 70%
- Gain = 18 dB

GTVA104001FA
- 960 to 1215 MHz
- P 3dB = 410 W
- Efficiency = 70%
- Gain = 18.5 dB

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New GaN RF Power Transistors for Cellular Infrastructure Applications

Building on our extensive cellular infrastructure experience and expertise, Infineon introduces a new family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors which enable cellular amplifier designers to build smaller, more powerful and more flexible transmitters.

Key Features:

  • 70 W to 170 W (P3dB)
  • 1800 MHz to 2700 MHz
  • High efficiency
  • Broadband capability

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Download Service

RF Power Selection Guide

RFP_SG2016

 

RF Power Solutions for radar, commercial avionics, ISM & broadcast applications

RFP_ProductBrief2016



Featured Product
5W & 10W Unmatched RF Power Transistors

20 W & 40 W Cellular Systems Doherty Solutions for 1800/1900 MHz Bands

  • PXAC182002FC (For 20 W Systems)  
    Typical Doherty RF Characteristics: 
    • P OUT = 28 W avg
    • Gain = 16.5dB
    • Efficiency = 51%
    • Signal: 1C WCDMA
  • PXAC192908FV (For 40W Systems)
    Typical Doherty RF Characteristics
    • P OUT = 70W avg
    • Gain: 14dB
    • Efficiency: 49%
    • Signal: 1C WCDMA

Application Notes

Title Size Date Version
635 KB 06 Mar 2012
1.4 MB 20 Oct 2009 01_00
446 KB 01 Sep 2013 01_00
861 KB 16 Oct 2014 01_00

Product Brochure

Title Size Date Version
2.5 MB 23 Sep 2016 06_00

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