Silicon Carbide Schottky Diodes
Silicon Carbide (SiC) is a revolutionary material for power semiconductors, its physical properties outperform Si and GaN power devices by far.
Features:
- Benchmark switching behavior
- No reverse recovery
- No temperature influence on the switching behavior
- Standard operating temperature -55° to 175°C
SiC power devices enable increased efficiency, reduced solution size, higher switching frequency and produce significant less electromagnetic interference (EMI) in a variety of target applications:
Applications:
- Power factor correction
- Solar and UPS inverters
- Motor drives
- Output rectification
Infineon offers Silicon Carbide Schottky diodes in 600V and 1200V.
The latest SiC Generation: thinQ!™ 3G
The latest generation of Infineon Silicon Carbide Schottky diodes has been launched in February 2009 and features the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. Additionally, Infineon provides the industry’s broadest SiC Schottky diode portfolio which not only includes the TO-220 package (real 2pin version) but also the DPAK package for high power density surface mount designs.
Features:
- Lowest switching losses due to lowest Qc (Qrr) for any current rating in the market
- Fully surge-current stable, high reliability and ruggedness
- Lower cost
Benefits:
- System efficiency improvements at light & medium load
- Enabling higher frequency designs and increased power density solutions
- Lower system costs due to reduced cooling requirements
- Broadest range of current ratings and lower costs/Amp. for cost-effective performance improvements
Here the link to the press release
Bare Die Silicon Carbide Schottky Diodes (Chips)
Here the link to the product list
- Product Type List
- Documents
- Contact us