Silicon Carbide Schottky Diodes - NEW 3G now available!

Silicon Carbide (SiC) is a revolutionary material for power semiconductors, its physical properties outperform Si- and GaN power devices by far.

Features

• Benchmark switching behavior
• No reverse recovery
• No temperature influence on the switching behavior
• Standard operating temperature -55° to 175°C

SiC power devices enable increased efficiency, reduced solution size, higher switching frequency and produce significant less electromagnetic interference (EMI) ina variety of target applications:

• Power factor correction
• Solar and UPS inverters
• Motor drives
• Output rectification

Infineon offers SiC Schottky diodes in 300V, 600V and 1200V.  

The new third and latest generation of Infineon SiC Schottky diodes has been launched in February 2009 and features the industry’s lowest device capacitance for any given current rating , which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. Additionally, Infineon provides the industry’s broadest SiC Schottky diode portfolio which not only includes the TO-220 package (real 2pin version) but also the DPAK package for high power density surface mount designs.

Features

• Lowest switching losses due to lowest Qc (Qrr) for any current  rating in the market 
•  Fully surge-current stable, high reliability and ruggedness
•  Lower cost
  
  

Benefits 

• System efficiency improvements at light & medium load 
• Enabling higher frequency designs and increased power density solutions 
• Lower system costs due to reduced cooling requirements 
• Broadest range of current ratings and lower costs/Amp. for cost-effective performance improvements

Here the link to the press release