650V Rapid 1 and Rapid 2 Diode

 
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650V Rapid 1 and Rapid 2 Diode

Ultra- and Hyper-Fast Si Diodes Offering Outstanding Performance

Header_RapidDiodes_OffeneDaten_NEWPARTS

 

Infineon’s new Rapid 1 and Rapid 2 power silicon diodes complement the existing high power 600V/650V diodes, filling the gap between the SiC diodes and emitter-controlled diodes. The new hyper- and ultra-fast diode families offer outstanding efficiency and reliability and perfectly balance cost and performance. The additional 50V provide higher reliability.

 

650V Rapid 1 Diode

Infineon's Rapid 1 diode family, with 1.35V temperature-stable forward voltage (V F), ensures the lowest conduction losses and by means of soft recovery keeps EMI emissions to a minimum. The devices are perfectly suited for Power Factor Correction (PFC) topologies, typically found in major home appliances such as Air Conditioners and Washing Machines.

 

650V Rapid 2 Diode

The Rapid 2 diode family is designed for applications switching between 40kHz and 100kHz by offering low reverse recovery charge (Q rr) and time (t rr) to minimize the reverse conduction times attributed to the power switch turn-on losses and thus providing maximum efficiency.

 

Common Cathode and Dual Annode Rapid 1 and Rapid 2 Diodes

Rapid diode, with ultra-thin wafer technology to achieve very low and temperature stable forward voltage, now comes in a common cathode and dual annode configuration on a TO-247 and TO-220 package. Up to 80A/650V in common cathode configuration and a 75A/650V in dual annode variant allows design optimization for more compact dimensions, easier assembly and consequently lower costs.


Reliability-data-button

 

Rapid Diode with optimized V F Applications
  • 1.35V temperature-stable forward voltage (V F)
  • Highest S-factor for ultimate softness and low EMI filtering
  • Lowest I rrm to provide low turn-on losses on the boost switch
  • For applications switching between 18kHz and 40kHz

 

Rapid 2 Diode with optimized Q rr:V F Applications
  • Lowest reverse recovery charge (Q rr): forward voltage (V F) ratio for Best-in-Class performance
  • Low reverse recovery time (t rr)
  • Lowest I rrm to provide lowest turn-on losses on the boost switch
  • Designed for applications switching between 40kHz and 100kHz

 

Topologies Common Cathode diode:
CommonCathode_rapiddiodes
  • Interleaved PFC (Server, Telecom, SMPS, AirCon, Solar)
  • Secondary Side Rectification (Welding)
  • Sparse Matrix Rectifier (UPS)
  • 3 Level inverter (Solar, UPS)
  • Vienna Rectifier (UPS)

Product OPN Product Status Order Online Packages Green Budgetary Price €€/1k Configuration IF I(FSM) VF
Matching Results: 25                  
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IDP08E65D1  

IDP08E65D1XKSA1

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PG-TO220-2

0.47
Single
8.0 A
16.0 A
64.0 A
1.35 V
1.35 V
IDV15E65D2  

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PG-TO220-2

0.69
Single
15.0 A
15.0 A
100.0 A
1.6 V
1.6 V
IDP15E65D1  

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PG-TO220-2

0.55
Single
15.0 A
30.0 A
120.0 A
1.35 V
1.35 V
IDW15E65D2  

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PG-TO247-3

0.86
Single
15.0 A
30.0 A
100.0 A
1.6 V
1.6 V
IDW30E65D1  

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PG-TO247-3

0.95
Single
30.0 A
60.0 A
240.0 A
1.35 V
1.35 V
IDW40E65D1  

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PG-TO247-3

1.23
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40.0 A
80.0 A
320.0 A
1.35 V
1.35 V
IDP08E65D2  

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PG-TO220-2

0.49
Single
8.0 A
16.0 A
60.0 A
1.6 V
1.6 V
IDV08E65D2  

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PG-TO220-2

0.61
Single
8.0 A
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60.0 A
1.6 V
1.6 V
IDP15E65D2  

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PG-TO220-2

0.56
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100.0 A
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1.6 V
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PG-TO220-2

0.85
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40.0 A
80.0 A
250.0 A
1.6 V
1.6 V
IDW40E65D2  

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PG-TO247-3

1.24
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320.0 A
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1.6 V
IDW75D65D1  

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PG-TO247-3

1.52
Dual Anode
75.0 A
150.0 A
580.0 A
1.35 V
1.7 V
IDW30C65D1  

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PG-TO247-3

1.09
Common Cathode
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120.0 A
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1.7 V
IDW60C65D1  

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PG-TO247-3

1.39
Common Cathode
30.0 A
60.0 A
240.0 A
1.35 V
1.7 V
IDW20C65D2  

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PG-TO247-3

1.0
Common Cathode
10.0 A
20.0 A
60.0 A
1.6 V
2.2 V
IDW30C65D2  

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PG-TO247-3

1.09
Common Cathode
15.0 A
30.0 A
100.0 A
1.6 V
2.2 V
IDV30E65D2  

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PG-TO220-2

0.72
Single
17.5 A
30.0 A
180.0 A
1.6 V
2.2 V
IDP20E65D2  

IDP20E65D2XKSA1

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PG-TO220-2

0.66
Single
20.0 A
40.0 A
120.0 A
1.6 V
2.2 V
IDP20C65D2  

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PG-TO220-3

0.73
Common Cathode
10.0 A
20.0 A
60.0 A
1.6 V
2.2 V
IDW80C65D2  

IDW80C65D2XKSA1

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PG-TO247-3

1.86
Common Cathode
40.0 A
80.0 A
250.0 A
1.6 V
2.2 V
IDW80C65D1  

IDW80C65D1XKSA1

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PG-TO247-3

1.88
Common Cathode
40.0 A
80.0 A
320.0 A
1.35 V
1.7 V
IDP30E65D2  

IDP30E65D2XKSA1

active and preferred

 

 

PG-TO220-2

0.73
Single
30.0 A
60.0 A
180.0 A
1.6 V
2.2 V
IDP30C65D2  

IDP30C65D2XKSA1

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PG-TO220-3

0.8
Common Cathode
15.0 A
30.0 A
100.0 A
1.6 V
2.2 V
IDP30E65D1  

IDP30E65D1XKSA1

active and preferred

 

 

PG-TO220-2

0.69
Single
30.0 A
60.0 A
180.0 A
1.35 V
1.7 V
IDV20E65D1  

IDV20E65D1XKSA1

active and preferred

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PG-TO220-2

0.67
Single
15.0 A
28.0 A
120.0 A
1.35 V
1.7 V

650V Rapid 1 and Rapid 2 Diode

Product Brief

Title Size Date Version
386 KB 14 Mar 2013 02_00

Article

Title Size Date Version
568 KB 14 Mar 2013
9.7 MB 15 Mar 2013

Application Brief

Title Size Date Version
712 KB 27 Feb 2014 01_00

Application Notes

Title Size Date Version
660 KB 23 Nov 2015 01_00
660 KB 24 Oct 2014 01_00

Application Brochure

Title Size Date Version
340 KB 23 Oct 2015 01_00
4.4 MB 24 May 2016 01_00

Product Selection Guide

Title Size Date Version
21 MB 22 Feb 2016 00_00
2 MB 24 Oct 2014 01_00

Editorials

Title Size Date Version
521 KB 04 Nov 2015 01_00

Additional Product Information

Title Size Date Version
879 KB 24 Oct 2014 01_00
253 KB 11 Sep 2015 01_00
104 KB 24 Oct 2014 01_00

650V Rapid 1 and Rapid 2 Diode

Simulation Models

Title Size Date Version
3 KB 23 Jun 2015 01_00
3 KB 23 Jun 2015 01_00

650V Rapid 1 and Rapid 2 Diode

Infineon's New 650V Rapid Diode Families

Infineon's New 650V Rapid Diode Families

Infineon’s new Rapid 1 and 2 power silicon diodes complement the existing high power 600V/650V diodes, filling the gap between the SiC diodes and emitter-controlled diodes. The new hyper- and ultra-fast diode families offer outstanding efficiency and reliability and perfectly balance cost and performance. The additional 50V provide higher reliability without efficiency being penalized.

 
Length 4:07

 

Infineon's New 650V Rapid 1 Diode

Infineon's New 650V Rapid 1 Diode

Infineon`s Rapid 1 diode family, with 1.35V temperature-stable forward voltage (V F), ensures the lowest conduction losses and by means of soft recovery keeps EMI emissions to a minimum. They are perfectly suited for Power Factor Correction (PFC) topologies, typically found in major home appliances, like air conditioners and washing machines, as well as boost stages in photovoltaic inverters.

 
Length 4:13

 

Infineon's New 650V Rapid 2 Diode

Infineon's New 650V Rapid 2 Diode

The Rapid 2 diode family is designed for applications switching between 40 kHz and 100 kHz by offering low reverse recovery charge (Q rr) and time (t rr) to minimize the reverse conduction times attributed to the power switch turn-on losses and thus providing maximum efficiency.

 
Length 4:09

 

Introducing the latest Discretes IGBT Technology - matching tomorrow's High Efficiency demands in Solar, UPS, Welding and SMPS applications

Introducing the latest Discretes IGBT Technology - matching tomorrow's High Efficiency demands in Solar, UPS, Welding and SMPS applications

Today Infineon's TRENCHSTOP™ 5 IGBT technology is capable of switching well beyond 100 kHz. The new products are optimized for PFC and PWM topologies in applications such as Photovoltaic Inverters, Uninterruptible Power Supplies (UPS), Inverterised Welding Machines and hard switching applications.

 
Length 4:09

 

650V Rapid 1 and Rapid 2 Diode

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