3rd Generation Reverse Conducting IGBT
Excellent Performance and Highest Reliability
Infineon’s 3rd Generation Reverse Conducting IGBT responds to the growing demand for devices with higher breakthrough voltage and current withstand capabilities, by now expanding the range of highest efficiency IGBT for soft switching applications such as Induction Cookers and Photovoltaic Inverters. The new products are optimized for lower switching and conduction losses and provide Best-in-Class efficiency in 1200V and 1350V voltage classes.
The new generation enables more than 20% switching loss reduction and 5°C case temperature reduction in comparison to Infineon’s 2nd Generation RC IGBT family. Lower switching losses reduce the thermal stress on the device and lead to longer lifetime and higher reliability.
Portfolio extension with 30A and 40A IGBTs, allows for the development of higher power designs in single end topology up to 3.6kW. 30A and 40A devices in 1350V enable extension of the safe operating area (SOA) and higher over-current rating at peak current conditions benefiting the enhanced robustness and reliability. High efficiency, excellent thermal performance and EMI behavior make it the best suited IGBT on the market for Induction Cookers, Photovoltaic Inverters and other resonant switching applications.
Product Portfolio 3rd Generation RC IGBT
Click on a product type to learn more, download datasheets and order
|Part Number||Package||V CE [V]||I C [A]||V CE(sat) [V]||V f typ [V]||E off @ 600V / µs [mJ]|
|T case 25°C||T case 100°C||T j 25°C||T j 175°C|
|Product Selection Guide|
|16 Feb 2014||01_00||15.5 MB||English|
|10 Aug 2013||1.3 MB||English|
|18 Oct 2012||501 KB||English|
|19 Feb 2014||01_00||2 MB||English|
|29 Nov 2013||983 KB||English|
|Additional Product Information|
Press Release - Infineon Extends 3rd Generation Reverse Conducting IGBT Portfolio, Delivering Industry’s Best-in-Class Efficiency and Highest Reliability (Infineon-Press_Release_3rd_Gen_RC_IGBTs-AD-v1.0-en.pdf)
|23 Oct 2012||175 KB||English|
Pressemeldung - Infineon erweitert Portfolio der dritten Generation von Reverse Conducting IGBTs mit herausragender Effizienz und höchster Zuverlässigkeit (Infineon-Pressemeldung_3te_Gen_RC_IGBTs-AD-v1.0-de.pdf)
|23 Oct 2012||121 KB||German|
|03 Feb 2014||481 KB||English|