1100V/1200V/1350V 3rd Generation Reverse Conducting IGBT

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1100V/1200V/1350V 3rd Generation Reverse Conducting IGBT

Excellent Performance and Highest Reliability


Header-3rd Generation Reverse Conducting IGBT_646x247


Infineon’s 3rd Generation Reverse Conducting IGBT responds to the growing demand for devices with higher breakthrough voltage and current withstand capabilities, by now expanding the range of highest efficiency IGBT for soft switching applications such as Induction Cookers and Photovoltaic Inverters. The new products are optimized for lower switching and conduction losses and provide Best-in-Class efficiency in 1200V and 1350V voltage classes.

The new generation enables more than 20% switching loss reduction and 5°C case temperature reduction in comparison to Infineon’s 2nd Generation RC IGBT family. Lower switching losses reduce the thermal stress on the device and lead to longer lifetime and higher reliability.

Portfolio extension with 30A and 40A IGBTs, allows for the development of higher power designs in single end topology up to 3.6kW. 30A and 40A devices in 1350V enable extension of the safe operating area (SOA) and higher over-current rating at peak current conditions benefiting the enhanced robustness and reliability. High efficiency, excellent thermal performance and EMI behavior make it the best suited IGBT on the market for Induction Cookers, Photovoltaic Inverters and other resonant switching applications.


Product Portfolio 3rd Generation RC IGBT

Click on a product type to learn more, download datasheets and order

Part Number Package V CE [V] I C [A] V CE(sat) [V] V f typ [V] E off @ 600V / µs [mJ]
      T case 25°C T case 100°C T j 25°C   T j 175°C  


TO-247 1200 40 20 1.48 1.80 1.80 0.95


TO-247 1350 40 20 1.60 1.90 1.80 1.30


TO-247 1100 60 30 1.55 2.00 1.41 1.15


TO-247 1200 60 30 1.55 1.90 1.80 1.47


TO-247 1200 80 40 1.55 1.90 1.80 2.02


TO-247 1350 60 30 1.65 2.00 1.90 1.93


TO-247 1350 80 40 1.65 2.00 1.90 2.50

1100V/1200V/1350V 3rd Generation Reverse Conducting IGBT

 Key Features Benefits  Applications 
  • Best-in-class conduction properties in V CE(sat) and V f performance
  • Lowest switching losses, highest effciency
  • Excellent thermal behavior
  • T j(max) = 175 °C
  • Soft current turn-off waveforms low EMI
  • Higher breakthrough voltage, V BR(min) of 1350V
  • Lowest power dissipation
  • Better thermal management
  • Surge current capability for lower EMI filtering requirements
  • Reduced system costs
  • Enhanced robustness and reliability




Button IGBT Discretes Selection Guide 175x75 IFX_Website-Button_Webinars Reliability-data-button Banner_Simulation_Models_IGBT


1100V/1200V/1350V 3rd Generation Reverse Conducting IGBT

Application Notes

Title Size Date Version
983 KB 29 Nov 2013

Product Brief

Title Size Date Version
501 KB 18 Oct 2012

Additional Product Information

Title Size Date Version
175 KB 23 Oct 2012
481 KB 03 Feb 2014

Application Brochure

Title Size Date Version
2 MB 01 Mar 2014 01_00

Product Selection Guide

Title Size Date Version
11.6 MB 01 Feb 2015 01_00
325 KB 14 Apr 2015 01_00

Product Catalogue

Title Size Date Version
29.9 MB 30 Apr 2015 01_00

1100V/1200V/1350V 3rd Generation Reverse Conducting IGBT

Simulation Models

Title Size Date Version
7 KB 17 Jun 2014
5 KB 11 Jul 2013 03_05

1100V/1200V/1350V 3rd Generation Reverse Conducting IGBT

Videos 3rd Generation Reverse Conducting IGBT

Infineon’s 3rd. Generation
Reverse Conduction IGBTs
Induction Heating: IGBT
Induction Heating: Infineon
IGBT portfolio

1100V/1200V/1350V 3rd Generation Reverse Conducting IGBT

1100V/1200V/1350V 3rd Generation Reverse Conducting IGBT

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