650V thinQ!™ SiC Diodes Generation 5

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With thinQ!™ Generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency at attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Q _c x V _f). The result is a series of products delivering improved efficiency in PFC and Boost stages over all load conditions with respect to all previous thinQ!™ generations.

The new generation is targeted for use in high-end Server and Telecom SMPS, PC Silverbox and Lighting applications, further more Solar Inverters and UPS systems. With the new Generation 5 these applications not only benefit from improved efficiency but also from reduced EMI, increased system reliability and cost/size savings due to reduced cooling requirements. An important achievement with Generation 5 is the industrial implementation of a thinning process which allows reducing the wafer thickness to almost 1/3 while maintaining the proven quality and yield levels.