650V CoolSiC™ Schottky Diode Generation 5

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Improved efficiency and price performance

Header-SiC-Diode

 

With CoolSiC™ generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency at attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as latest advancements in thin wafer technology, bringing improved thermal characteristics and lower figure of merit (Q c x V F). The result is a series of products delivering improved efficiency in PFC and boost stages over all load conditions with respect to all previous CoolSiC™ generations. 


The new generation is targeted for use in high-end server and telecom SMPS, PC power and lighting applications, further more solar inverters and UPS systems. With the new generation 5 these applications not only benefit from improved efficiency but also from reduced EMI, increased system reliability and cost/size savings due to reduced cooling requirements. An important achievement with generation 5 is the industrial implementation of a thinning process which allows reducing the wafer thickness to almost 1/3 while maintaining the proven quality and yield levels.


Product portfolio 650V CoolSiC™ diodes generation 5

Click on a product type to learn more, download datasheet and order 

650V TO-220 real 2pin TO-247 TO-247 Dual Die D²PAK real 2pin ThinPAK 8x8
2A

IDH02G65C5

   

IDK02G65C5

IDL02G65C5

3A

IDH03G65C5

   

IDK03G65C5

 
4A

IDH04G65C5

   

IDK04G65C5

IDL04G65C5

5A

IDH05G65C5

   

IDK05G65C5

 
6A

IDH06G65C5

   

IDK06G65C5

IDL06G65C5

8A

IDH08G65C5

   

IDK08G65C5

IDL08G65C5

9A

IDH09G65C5

   

IDK09G65C5

 
10A

IDH10G65C5

IDW10G65C5

 

IDK10G65C5

IDL10G65C5

12A

IDH12G65C5

IDW12G65C5

 

IDK12G65C5

IDL12G65C5

16A

IDH16G65C5

IDW16G65C5

     
20A

IDH20G65C5

IDW20G65C5

IDW20G65C5B

   
24A     IDW24G65C5B    
30A  

IDW30G65C5

     
32A  

 

IDW32G65C5B    
40A  

IDW40G65C5

IDW40G65C5B

   

 



Benefits Features Applications
  • Perfectly matching with superjunction devices e.g. CoolMOS™
  • Improved efficiency over all load conditions
  • Increased effciency compared to Silicon diode alternatives
  • Reduced EMI
  • Highly stable switching performance
  • Reduced cooling requirements
  • RoHS compliant
  • Very high quality and high volume manufacturing capability
  • V BR at 650V
  • Improved Figure of Merit (Q c x V F)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T jmax 175°C)
  • Improved surge capability
  • Pb-free lead plating

 

Reliability-data-button


Product Selection Guide

Title Size Date Version
22.2 MB 21 Feb 2017 00_00
2 MB 14 Mar 2014 01_00

Product Catalogue

Title Size Date Version
2.9 MB 12 May 2017 03_00

Product Brochure

Title Size Date Version
3.2 MB 15 May 2017 02_00

Product Brief

Title Size Date Version
466 KB 18 Apr 2016 01_00
785 KB 24 Mar 2013 01_00

Application Brochure

Title Size Date Version
340 KB 23 Oct 2015 01_00

Application Notes

Title Size Date Version
3.2 MB 28 Mar 2017 01_00
3 MB 09 Feb 2016 01_02
12.1 MB 13 Sep 2016 01_00
1.4 MB 16 Nov 2015 01_00
2.2 MB 19 Dec 2014 02_00
791 KB 16 Jun 2014 01_00

Editorials

Title Size Date Version
521 KB 04 Nov 2015 01_00

Article

Title Size Date Version
1.4 MB 10 Sep 2014 01_00
339 KB 26 Sep 2012
1.6 MB 01 Sep 2012 01_00

Additional Product Information

Title Size Date Version
253 KB 11 Sep 2015 01_00
812 KB 01 Sep 2012 01_00
142 KB 01 Sep 2012 01_00
119 KB 01 Sep 2012 01_00

Evaluation Boards

Board Family Description Status
EVAL_2K5W_CCM_4P_V2 Diode (Si, SiC), Gate Driver, MOSFET, Power Controller (PWM, PFC) 2500W CCM Power factor correction (PFC), 110/230 AC to 400 DC, >98% peak efficiency, 65/100 kHz, shows efficiency benefits due to usage of TO247-4
  • 1EDI60N12AF
  • ICE3PCS01G
  • ICE3RBR4765JZ
  • IDH16G65C5
  • IFX91041
  • IPZ60R040C7
coming soon
EVAL_800W_130PFC_C7 Diode (Si, SiC), Gate Driver, MOSFET, Power Controller (PWM, PFC) 800W CCM Power factor correction (PFC), 110/230 AC to 400 DC, 97.8% peak efficiency, 130 kHz-high power density
  • 2EDN7524F
  • ICE2QR4780Z
  • ICE3PCS01G
  • IDH06G65C5
  • IPP60R180C7
  • XMC1302-T038X200 AB
on request
EVAL_800W_PFC_C7_V2 Diode (Si, SiC), Gate Driver, Power Controller (PWM, PFC), MOSFET 800W CCM Power factor correction (PFC), 110/230 AC to 400 DC, 97.8% peak efficiency, 130 kHz-high power density
  • 2EDN7524F
  • ICE2QR4780Z
  • ICE3PCS01G
  • IDH06G65C5
  • IPP60R180C7
  • XMC1402-Q040X0128 AA
active and preferred
EVAL_800W_PFC_P7 Gate Driver, Microcontroller, MOSFET, Power Controller (PWM, PFC) The purpose of this demoboard is to demonstrate the performance of the latest 600V CoolMOS™ P7 (IPP60R180P7) Power MOSFET technology working at 130kHz in a CCM PFC boost converter along with EiceDRIVER™ ICs (2EDN7524F) and 650V CoolSiC™ Schottky Diode Generation 5 (IDH06G65C5) using analog control (ICE3PCS01G).
  • 2EDN7524F
  • ICE2QR2280Z
  • ICE3PCS01G
  • IDH06G65C5
  • IPP60R180P7
coming soon
EVAL_800W_PSU_4P_C7 MOSFET, Gate Driver This 800W evaluation board is intended to be a form, fit and function testplatform for server applications to show operation of the 600V CoolMOS C7, 650V SiC Diode , Optimos 40V, Quasi Resonat Flyback (QR) and XMC 1400/4200 controller.The evaluation board is designed around the Infineon 600V CoolMOS 4-Pin device and the cost effective Optimos 40V Technology to show switching performance and power density design .
    active and preferred
    KIT_2K5W_CCM_TOLL MOSFET, Diode (Si, SiC) This TO-lead less (TOLL) adapter is special made in order to upgrade the EVAL_2.5KW_CCM_4PIN evaluation board for SMD devices in the PFC stage by just exchanging the heatsink with the already assembled devices on it. The C7 GOLD series (G7) for the first time brings together the benefits of the improved C7 GOLD 600V CoolMOS™ technology, 4 pin Kelvin Source capability and the improved thermal properties of the TOLL package to enable a possible SMD solution for high current applications.
    • CoolMOSTM -IPT60R028G7
    • CoolSICTM G5 - IDK12G65C5
    active and preferred
    EVAL 300W CCM PFC P6 Diode (Si, SiC), MOSFET, Power Controller (PWM, PFC) 300W CCM Power factor correction (PFC), 110/230 AC to 400 DC, 98.5% peak efficiency
    • ICE3PCS01G
    • IDH02G65C5
    • IPP60R190P6
    active

    PCB Design Data

    Title Size Date Version
    752 KB 05 Nov 2013 02_00
    470 KB 05 Nov 2013 02_00
    98 KB 05 Nov 2013 02_00
    624 KB 05 Nov 2013 02_00

     

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    Length 9:23
    650V SiC thinQ™ Generation 5 Diodes - Advantages of Silicon Carbide and Market Positioning

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    Length 5:56
    650V SiC thinQ™ Generation 5 Diodes - Thin-Wafer, Efficiency and Portfolio

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