CoolSiC™ 1200V SiC JFET & Direct Drive Technology
The revolutionary CoolSiC™ 1200V SiC JFET family, in combination with the proposed Direct Drive Technology, represents Infineon’s leading edge solution to bring actual designs towards new and so far unattainable efficiency levels. The new SiC JFET consistently reduces the switching losses with respect to the available IGBT based silicon devices and even the conduction losses when its ohmic characteristics are fully exploited.
Utmost efficiency at highest power density levels can be reached also thanks to Infineon’s CoolSiC™ monolithically integrated body diode, showing a switching performance comparable with that of an external SiC Schottky barrier diode. The Infineon SiC JFET, with its ultrafast body diode and dedicated Driver IC, represents the best solution for Solar, UPS and Industrial Drives applications by combining best performance, reliability, safety and ease of use.
Features
- Complete solution offer consisting of JFET, P-channel MOSFET and dedicated driver
- No reverse recovery charge thanks to unipolar MOSFET-like characteristics
- Ohmic output characteristics
- Monolithically integrated ultrafast Body Diode
- Utmost efficiency levels reachable
- No gate oxides in the structure
- 10 years manufacturing of SiC diodes
Benefits
- Simplifies design-in and enables product to be operated as normally off device
- Extremely low and temperature independent switching losses
- Reduced conduction losses with respect to IGBT mainly at partial and at light load
- Low power losses in reverse operation in combination with synchronous rectification, reduced footprint
- Enables either reduced cooling requirements, the adoption of higher operating frequencies resulting in system costs savings by shrinking passive components or enabling a higher power density design in same footprint
- Utmost reliability
- High quality know-how and capacity in SiC devices
