Low Noise Si Transistors up to 5 GHz
In this category you find high performance low noise wideband amplifiers (LNAs). They all base on silicon bipolar technology with good price-to-performance ratio and make usage of the so called SIEGET assembly method in order to achieve best in class power gain. Their transition frequency fT of around 25 GHz supports applications up to 5 GHz but still makes them easy to use and to a good choice also for oscillators.
The stated gain values Gmax apply to a frequency of 1.8 GHz. The noise figure NFmin has been measured in a testfixture with a noise matching at the input, the stated number applies to low frequencies. The OIP3 and OP1dB values have been measured in the 50 Ohm system and can be optimized by choosing an appropriate load impedence.