IR's 1200V Gen8 IGBT Family Delivers Benchmark Efficiency and Ruggedness for Industrial Applications

Nov 11, 2014 | Technology Media

EL SEGUNDO, Calif. — International Rectifier, IR ® (NYSE: IRF), a world leader in power management technology, today introduced a new generation Insulated Gate Bipolar Transistor (IGBT) technology platform. The Generation 8 (Gen8) 1200V IGBT platform utilizes IR's latest generation trench gate field stop technology delivered in industry standard TO-247 packages to offer best-in-class performance for industrial and energy saving applications.

The novel Gen8 devices are available with current ratings from 8A up to 60A with typical VCE(ON) of 1.7V and a short-circuit rating of 10µs to reduce power dissipation, resulting in increased power density and superior robustness.

"With the development of this new benchmark technology and state-of-the-art IGBT silicon platform, IR underlines its decades of commitment to the advancement of power electronics technology. Our goal is to achieve 100 percent inverterization of all electric motors for a more efficient use of electric energy and a greener environment," said Alberto Guerra, Vice President Strategic Marketing, IR's Energy Saving Products Business Unit.

The new technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers excellent current sharing when paralleling multiple IGBTs. The thin wafer technology delivers improved thermal resistance and maximum junction temperature up to 175°C.

"IR's Gen8 IGBT platform offers a superior technology targeting industrial applications. With best-in-class VCE(ON), robustness and excellent switching characteristics, this IGBT platform has been specifically tailored to achieve the demanding challenges of the industrial market," said Llewellyn Vaughan-Edmunds, Senior Product Marketing Manager, IR's Energy Saving Products Business Unit.

Part Number Package BV
(V)
I(nom)
(A)
V CE(ON)
(V)
Tsc
(µs)
IRG8P08N120KD TO247 1200 8 1.7 10
IRG8P15N120KD TO247 1200 15 1.7 10
IRG8P25N120KD TO247 1200 25 1.7 10
IRG8P40N120KD TO247 1200 40 1.7 10
IRG8P50N120KD TO247 1200 50 1.7 10
IRG8P60N120KD TO247 1200 60 1.7 10

Pricing for the IRG8P08120KD begins at US $3.05 in 10,000-unit quantities. Production orders are available immediately. The devices are RoHS compliant and prices are subject to change.

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