IR's AUIRF8736M2 Automotive DirectFET®2 Power MOSFET Delivers Increased Power Density While Reducing Overall System Size and Cost

Oct 10, 2013 | Market News

EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today announced the introduction of the AUIRF8736M2 DirectFET®2 power MOSFET for heavy load automotive applications including electric power steering, braking systems and pumps that require superior power density in a compact footprint.

Leveraging IR's benchmark COOLiRFET™ silicon technology, the 40V AUIRF8736M2 offers a 40% improvement in on-state resistance (Rds(on)) compared to previous generation devices to help minimize conduction losses. The dual-side cooling Medium Can DirectFET®2 power package delivers excellent thermal performance and low parasitic inductance.

"Combining the performance of the COOLiRFET™ silicon with the DirectFET®2 package, the AUIRF8736M2 delivers a 40% Rds(on) improvement in the same footprint, or equivalent performance to a Large Can device in a 50% smaller package reducing overall system size and cost for automotive applications," said Jifeng Qin, Product Manager, Automotive MOSFETs, IR's Automotive Products Business Unit.

The device is qualified according to AEC-Q101 standards, features an environmentally-friendly 100% lead-free package and RoHS compliant bill of materials, and is part of IR's automotive quality initiative targeting zero defects.

Part Number Package Vds Rds(on)
typ
Rds(on)
max
ID Qg
(typ)
AUIRF8736M2 DF2 M Can 40V 1.3mOhm 1.9mOhm 137A 136nC

Datasheets, application notes and qualification standards are available on the International Rectifier website.

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