Infineon presents high-performance LNA for Global Navigation Satellite Systems; BGA825L6S increases satisfaction of smartphone users

May 23, 2013 | Technology Media

Neubiberg, Germany – May 23, 2013 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has introduced BGA825L6S, a highly cost-effective Low Noise Amplifier (LNA) for Global Navigation Satellite Systems (GNSS). It features an ultra-low noise figure, high linearity, high gain and low current consumption over a wide range of supply voltages from 3.6V down to 1.5V. All these features make BGA825L6S an excellent choice for GNSS LNA as it improves sensitivity, provides greater immunity against out-of-band jammer signals, and reduces filtering requirements, which lowers the overall cost of the GNSS receiver.

BGA825L6S is based on Infineon’s B7HF SiGe technology which enables a cost-effective and ultra-small solution in a TSLP-6-3 package. The noise figure of 0.6 dB is the lowest one available in the market today. Noise figure is one of the key parameters for GNSS systems as it directly influences the sensitivity of the system, as well as the time-to-first-fix (TTFF) and time-to-subsequent-fix (TTSF). Thus, LNAs with a lower noise figure enable mobile phones with faster GNSS signal fix and much higher end user satisfaction.

BGA825L6S offers an optimized out-of-band input intercept point 3rd order (IIP3 oob) of +8 dBm, which dramatically improves sensitivity compared to other solutions available in the market today. This is important because in today’s smartphones a GNSS receiver co-exists with transceivers in the GSM/ EDGE/ UMTS/ LTE bands. These 3G/4G transceivers transmit at high power - in the range of +24 dBm - which due to insufficient isolation can couple to the GNSS receiver and drastically decrease system sensitivity.

Additionally, BGA825L6S provides a gain value of 17.0 dB which is optimized for different reference design specifications. With its high linearity and optimized gain value the LNA integrated in the receiver chip ensures reliable GPS function without interference from cellular and Wifi signals from adjacent bands

Availability

BGA825L6S is already in mass production.

About Infineon

Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, mobility, and security. In the 2012 fiscal year (ending September 30), the Company reported sales of Euro 3.9 billion with close to 26,700 employees worldwide. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY).

Information Number

INFPMM201305.049

Press Photos

  • BGA825L6S is based on Infineon's B7HF SiGe technology which enables a cost-effective and ultra-small solution in a TSLP-6-3 package
    BGA825L6S is based on Infineon's B7HF SiGe technology which enables a cost-effective and ultra-small solution in a TSLP-6-3 package
    BGA825L6S_TSLP-6-3_plain

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