IR's Gen8 1200V IGBT Technology Platform Delivers Benchmark Efficiency and Ruggedness for Industrial Applications

Nov 13, 2012 | Technology Media

EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced a new generation Insulated Gate Bipolar Transistor (IGBT) technology platform. The Generation 8 (Gen8) 1200V IGBT platform utilizes IR's latest generation trench gate field stop technology to offer best-in-class performance for industrial and energy saving applications.

The novel Gen8 design allows best-in-class Vce(on) to reduce power dissipation and increase power density, and delivers superior robustness.

"With the development of this new benchmark technology and state-of-the-art IGBT silicon platform, IR underlines its decades of commitment to the advancement of power electronics technology. Our goal is to achieve 100 percent inverterization of all electric motors for a more efficient use of electric energy and a greener environment," said Alberto Guerra, Vice President Strategic Marketing, Energy Saving Products Business Unit.

The new technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers excellent current sharing when paralleling multiple IGBTs in high-current power modules. The thin wafer technology delivers improved thermal resistance and maximum junction temperature up to 175°C.

"IR's Gen8 IGBT platform offers a superior technology targeting industrial applications. With best-in-class Vce(on), robustness and excellent switching characteristics, this IGBT platform has been specifically tailored to achieve the demanding challenges of the industrial market," said Llewellyn Vaughan-Edmunds, IGBT Product Marketing Manager, IR's Energy Saving Products Business Unit.

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