IR's Family of TSOP-6 HEXFET® MOSFETs Offer Cost-Effective, Flexible Solution for Low Power Applications

Apr 19, 2012 | Technology Media

EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today announced the introduction of an extensive portfolio of devices featuring IR's latest low-voltage HEXFET® MOSFET silicon in a TSOP-6 package for low power applications including load switch, charge and discharge switches for battery protection and inverter switches.

Featuring very low on-state resistance (RDS(on)) to significantly cut conduction losses, the new power MOSFETs are available as 20 V and 30 V devices in N-and P-Channel configurations with a maximum gate drive from 12Vgs to 20Vgs.

"IR's new portfolio of power MOSFETs in a TSOP-6 package complement our existing devices housed in SOT-23 and SO-8 packages to provide customers more flexibility in designing their systems. As a result of the low RDS(ON) of this platform, these devices can be used to replace MOSFETs in larger packages to save board space and reduce system cost," said Stéphane Ernoux, Director, IR's Power Management Devices Business Unit.

All of the new devices are MSL1 and RoHS compliant containing no lead, bromide or halogen.

Datasheets are availabel via the part number links found in the table above. MOSFET product selection tool are available throughout the site.

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