IR Introduces Efficient, Reliable Ultra-fast 1200 V IGBTs for Induction Heating Applications

Sep 22, 2011 | Technology Media

EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced a pair of efficient, reliable ultra-fast Trench Insulated Gate Bipolar Transistors (IGBTs) optimized for induction heating and resonant switching applications such as welding and high power rectification.

The new 1200 V IGBTs utilize IR's proven thin-wafer trench technology to offer critical performance benefits including low VCE(on) and ultra-fast switching to reduce power dissipation and achieve higher power density. In addition, devices feature a 1300 V repetitive peak rating for added system reliability. The IGBTs are co-packaged with a low forward-voltage high peak current soft forward-recovery diode optimized for resonant zero current turn-on operation.

"With their rugged reliability, and higher power density and efficiency, IR's new 1200 V IGBTs are ideally suited to induction heating and resonant applications," said Llewellyn Vaughan-Edmunds, IGBT product marketing manager, IR's Energy Saving Products Business Unit.

These new IGBTs complement IR's family of IGBTs for motor drive and hard switching applications. IR's focus on power applications allows for optimization of devices to meet the technical requirements of various power systems.

Datasheets available via the part number links found above.

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