IR's Automotive MOSFETs in Novel WideLead Package Reduce Lead Resistance by 50 Percent While Delivering 30 Percent Higher Current

May 17, 2011 | Technology Media

EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today announced the introduction of a family of automotive qualified MOSFETs housed in a novel WideLead TO-262 package that reduces lead resistance by 50 percent compared to traditional TO-262 packages while offering 30 percent higher current.

Designed for generic heavy load/ high power through-hole applications requiring low on-state resistance (Rds(on)), Electric Power Steering and battery switches used in internal combustion engine (ICE) cars, and micro and full hybrid vehicles, the new automotive MOSFETs combine IR's advanced silicon and state-of-the-art packaging technologies to offer significant performance improvements while being compatible with existing design standards.

In standard TO-262 through-hole packages, source and drain leads can add up to 1mOhm of resistance, in addition to the on-state resistance (Rds(on)) of the MOSFET. The new WideLead TO-262 through-hole package reduces lead resistance to less than half a milliohm, greatly reducing conduction losses and heating in the leads to deliver 30 percent more current carrying capability than a traditional TO-262 package for a given operating temperature. Under evaluation, the lead temperature of the WideLead was 30 percent cooler than the standard TO-262 at DC currents of 40A and 39 percent cooler at 60A. Furthermore, other packaging enhancements allow the WideLead to deliver 20 percent lower Rds(on) compared with the same MOSFET in a standard TO-262 package.

"The new WideLead TO-262 package design was inspired by the excellent performance of the ultra-low die free package resistance of the DirectFET® package and the limitations of the traditional TO-262 package," said Benjamin Jackson, product manager, IR's Automotive Products Business Unit. "This new family of MOSFETs housed in IR's novel WideLead package drastically lowers conduction losses and reduces self-heating in the leads while delivering high current to provide a robust and reliable solution for automotive applications."

IR's automotive MOSFETs are subject to dynamic and static part average testing combined with 100 percent automated wafer level visual inspection as part of IR's automotive quality initiative targeting zero defects.

The devices are qualified according to AEC-Q101 standards, feature an environmentally friendly, lead-free and RoHS compliant bill of materials, and are part of IR's automotive quality initiative targeting zero defects.

Datasheets, application notes and qualification standards are available via the part number links above. Spice models are available on request.

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