IR's Family of -30 V P-channel Power MOSFETs Offers Design Flexibility and Simplicity

Sep 9, 2010 | Technology Media

EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today announced the introduction of a new family of -30 V devices featuring IR's latest P-channel MOSFET silicon in an SO-8 package for battery charge and discharge switches, and system/load switches used in DC applications.

The new P-channel devices offer on-state resistance (RDS(on)) from 4.6 mOhm up to 59 mOhm to match a wide range of power requirements. P-channel MOSFETs eliminate the need for level shifting or charge pump circuitries making them a highly desirable solution for system/load switch applications.

"This new SO-8 P-channel MOSFET family delivers a strong improvement in current handling compared to previous generation devices to offer customers a wide range of RDS(on) options to suit their thermal and cost requirements while the P-channel technology helps simplify design circuitry," said George Feng, marketing engineer for IR's Power Management Devices Business Unit.

The P-channel MOSFET devices are qualified to moisture sensitivity level 1 (MSL1), are offered lead free and are RoHS compliant.

Datasheets in addition to a MOSFET product selection tool are available on the International Rectifier website at http://www.irf.com.

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