IR Expands Its Portfolio of Mid-Voltage Power MOSFETs in PQFN Package Utilizing Copper Clip Technology

Jun 24, 2010 | Technology Media

EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today announced the expansion of its portfolio of HEXFET® power MOSFETs to offer a complete family of mid-voltage devices available in a 5x6mm PQFN package with optimized copper clip and solder die.

The new power MOSFETs, featuring IR's latest silicon technology to deliver benchmark performance are designed for switching applications including DC to DC converters for network and telecom equipment, AC-DC Switch Mode Power Supplies (SMPS), and motor drive switches. Available in a wide range of voltages from 40V to 250V, the devices provide various levels of on-state resistance (RDS(on)) and gate charge (Qg) to offer customers optimized performance and cost for a given application.

"With a low 0.9mm profile and industry standard pin out, the devices' high current rating and low RDS(on) enable higher efficiency, power density and reliability compared to alternative solutions requiring multiple parallel parts, making them well suited to switching applications where board space is limited "said Hemal Shah, marketing manager for IR's Power Management Devices Business Unit.

All of the devices feature low thermal resistance (<0.5°C/W), are MSL1 industrial-qualified and RoHS compliant containing no lead, bromide or halogen.

Datasheets and an application note for the devices are available via the part number links above.

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