Infineon Introduces Next-Generation CoolMOS™ MOSFETs Combining the Benefits of the Superjunction Technology with the Strengths of Conventional High-Voltage Devices

Jun 19, 2009 | Technology Media

Neubiberg, Germany and Shenzhen, China – June 19, 2009 – Today at the China Power Show in Shenzhen, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launched its next-generation 600V CoolMOS™ C6 series of high-performance MOSFETs (metal-oxide semiconductor field-effect transistors). With the 600V CoolMOS C6 series, energy conversion applications such as PFC (Power Factor Correction) or PWM (Pulse Width Modulation) stages can be made significantly more energy efficient. The new C6 technology combines the advantages of modern superjunction or compensation devices including ultra-low area specific on-resistance (for example, only 99mOhm in a TO-220 package), and reduced capacitive switching losses while offering easy control of the switching behavior as well as high body diode ruggedness.


The C6 series is Infineon’s fifth CoolMOS generation of MOSFETs. With the predecessor CoolMOS C3 and CoolMOS CP series the company has continuously increased the switching speed and reduced the on-resistance. While the CoolMOS C3 devices are quite universal, the CP family addresses dedicated applications requiring highest switching speed and lowest R DS(on) related to the package.


With the new 600V CoolMOS C6 devices Infineon offers the best of two worlds. Manufacturers of power supplies, for example, benefit from the advantages of the superjunction CP family such as extremely low capacitive losses and very low area specific R DS(on) values, which make the power supplies more efficient, more compact, lighter and cooler. At the same time, the control of the switching behavior and the robustness against parasitic inductances and capacitances in the board are significantly improved, which simplifies system layout in comparison to designs based on the CP series. In detail this means that in the CoolMOS C6 series the interaction of gate charge, voltage/current slope and internal gate resistance is tuned so that even with very low gate resistances down to zero Ohm no excessive voltage or current slopes can appear. Additionally, the C6 devices show high ruggedness against hard commutation of the body diode, which can help to avoid the usage of expensive fast body diode components.


Infineon believes that ease of use and energy efficiency on the level of its predecessor CoolMOS C3 and the additional improvement in light load efficiency will make the CoolMOS C6 series the benchmark for hard switching applications. On the other hand very low energy stored in the output capacitance and hard commutation ruggedness makes the device ideal for resonant switching applications.


The CoolMOS C6 devices are easy to design-in and very well suited for various energy efficient applications such as power supplies or adapters for PCs, notebooks or mobile phones, lighting (HID, High-Intensity Discharge) products, as well as displays (LCD or Plasma TV) and consumer applications like gaming consoles. Infineon’s latest power semiconductor generation allows for highly reliable end products compliant with today’s high efficiency requirements and government regulations.


“Introducing the new CoolMOS C6 family Infineon underlines its strategy to further improve energy efficiency in a huge variety of applications while not sacrificing ease of use for the system designer,” said Andreas Urschitz, Vice President and General Manager, Industrial and Multimarket Division at Infineon Technologies. “With our new CoolMOS C6 generation of highly efficient and reliable power semiconductors based on innovative and system-optimized technology, Infineon strengthens its leadership in the power management market.”


Availability


Infineon introduces the new CoolMOS C6 family with 600V devices and a broad portfolio ranging from 70mΩ to 3.3Ω. Samples of the IPA60R190C6 providing 600V with a R DS(on) of 190mΩ in a TO-220 Fullpack are available. Volume production of the first members of the family is scheduled for August 2009.


Infineon at China Power Show


Infineon is showing its new series of 600V CoolMOS C6 power semiconductors and other product highlights in Hall 7 at Booth #A113 at the China Power Show (CPS, Shenzhen Convention & Exhibition Centre, Shenzhen, June 19-21, 2009).


For further information, please see www.infineon.com/power and www.infineon.com/coolmos

About Infineon

Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, communications, and security. In the 2008 fiscal year (ending September), the company reported sales of Euro 4.3 billion with approximately 29,100 employees worldwide. With a global presence, Infineon operates through its subsidiaries in the U.S. from Milpitas, CA, in the Asia-Pacific region from Singapore, and in Japan from Tokyo. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY).

Information Number

INFIMM200906.064

Press Photos

  • With the 600V CoolMOS™ C6 series, energy conversion applications such as PFC (Power Factor Correction) or PWM (Pulse Width Modulation) stages can be made significantly more energy efficient. The C6 technology offers ultra-low area specific on-resistance (for example, only 99mOhm in a TO-220 package), and reduced capacitive switching losses while offering easy control of the switching behavior as well as high body diode ruggedness.
    With the 600V CoolMOS™ C6 series, energy conversion applications such as PFC (Power Factor Correction) or PWM (Pulse Width Modulation) stages can be made significantly more energy efficient. The C6 technology offers ultra-low area specific on-resistance (for example, only 99mOhm in a TO-220 package), and reduced capacitive switching losses while offering easy control of the switching behavior as well as high body diode ruggedness.
    CoolMOS_C6

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