Infineon Technologies announces Availability of 256-Mbit Reduced Latency DRAM; New High Performance Memory Designed for High-Speed Networking Applications

Feb 11, 2002 | Technology Media

Munich, February 11, 2002 – Infineon Technologies AG (FSE/NYSE: IFX) today announced the availability of sample quantities of 256-Mbit Reduced Latency DRAM (RLDRAM™) components. Designed specifically for use in high-speed networking and fast cache applications, RLDRAM is an ultra-high speed Double Data Rate (DDR) SDRAM that combines fast, random access with extremely high bandwidth and high density. High end routers and switches as key building elements of today`s networks can now be equiped with a memory that allows the support of the fast growing data transmission rates.

RLDRAM is offered in two organizations: 8M x 32 and 16M x 16. Operating at clock frequencies up to 300 MHz and using a DDR interface, RLDRAM supports a sustained bandwidth of 2.4 Gbytes/s, while allowing random access within each of its 8 banks. The innovative memory architecture of the components allows ultra-fast random access with row cycle times down to 25ns, compared to standard DRAM row cycle times of 50ns and more. RLDRAM thereby closes the gap between DRAM and fast SRAM.

“RLDRAM offers the most advanced memory solution for data packet buffering, IP-address look-up table and fast cache applications,” said Dr. Ernst Strasser, Marketing Director for Graphics Memory and Specialty DRAM Products at Infineon Technologies. “It is an outstanding solution for design of next generation networks, meeting the 10 Gigabit per second (Gbps) to 40 Gbps data rates defined for OC-192 and OC-768 systems.”

To meet industry requirements for multiple sources of RLDRAM, Infineon and Micron Technology (NYSE: MU), are working together by developing pin- and function compatible products. “Micron is committed to supporting RLDRAM as a critical component for the worldwide networking infrastructure, which will help the industry reach the data rates necessary to fulfill growing demand for bandwidth and services,” said Jerry Johnson, Director of Strategic Marketing, Networking Products, at Micron Technology.

“RLDRAM complements IBM's suite of embedded and stand alone memory products for network applications and has the potential to fuel a new generation of OC-192 and OC-768 data rate systems,” said Tom Reeves, Vice President, Custom Logic, IBM Microelectronics. “IBM intends to add the RLDRAM interface to our ASIC cell library to help our customers take advantage of the technology.”

“The memory requirements of today’s data communications systems have exceeded the performance characteristics of commodity PC DRAMs,“ said Bob Merritt, Director of Emerging Markets at Semico Research Corporation. “RLDRAM provides a memory solution that will meet the critical performance requirements of broadband system designs, and the cooperative development agreement between two of the largest DRAM manufacturers will assure equipment providers of available capacity to meet demand.”

Designers of high-speed networking and communications equipment also can take advantage of the Avnet Design Services Avalon™ Reference Design System to quickly evaluate and improve their design using RLDRAM. “With the Avalon-compliant RLDRAM Add-on card and FPGA IP cores, designers of high-speed communications and networking equipment will be able to quickly implement systems that leverage the performance and power advantages of the new memory architecture,” said Warren Miller, vice president of marketing for Avnet Design Services.

Pricing and Availability


RLDRAM is packaged in an advanced T-FBGA (thin- fine pitch ball grid array) package, which offers a small form factor together with excellent electrical and thermal characteristics supporting clock frequencies of 300 MHz. The initial Infineon and Micron RLDRAM product portfolio includes the 256-Mbit components in 8Mx32 and 16Mx16 organizations, which will be available in three speed sorts (300MHz, 250MHz and 200MHz). Infineon’s pricing for the current samples, operating at 200MHz, is US$54.

About Infineon


Infineon Technologies AG, Munich, Germany, offers semiconductor and system solutions for applications in the wired and wireless communications markets, for security systems and smartcards, for the automotive and industrial sectors, as well as memory products. With a global presence, Infineon operates in the US from San Jose, CA, in the Asia-Pacific region from Singapore and in Japan from Tokyo. In the fiscal year 2001 (ending September), the company achieved sales of Euro 5.67 billion with about 33,800 employees worldwide. Infineon is listed on the DAX index of the Frankfurt Stock Exchange and on the New York Stock Exchange (ticker symbol: IFX). Further information is available at www.infineon.com.

More information about RLDRAM is available at www.rldram.com

Additional information about Avnet’s Avalon program is available at www.avnet.com/em/solutions/avalon

All brand or product names may be trademarks or registered trademarks of their respective companies.

Any statements in this document that are not historical facts are forward-looking statements that involve risks and uncertainties; actual results may differ from the forward-looking statements. Infineon Technologies undertakes no obligation to publicly release the results of any revisions to these forward-looking statements that may be made to reflect events or circumstances after the date hereof or to reflect the occurrence of unanticipated events.

Information Number

INFMP200202.033e

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