Infineon Technologies Introduces Dual-Band Low-Noise Amplifiers For GSM Phones; Now Available In Volume Quantities

May 22, 2001 | Technology Media

Munich - May 22, 2001 - Infineon Technologies (NYSE/DAX: IFX) today announced the availability, in volume quantities, of the integrated dual Low-Noise Amplifier (LNA) for GSM wireless handsets. Manufactured using Infineon`s B7HF Silicon Germanium (SiGe) bipolar technology, the chip is designed to meet low noise and high gain requirements for both dual-band GSM900/1800 and GSM900/1900 standards.

“The new dual band LNA chip underlines Infineon`s technological strength and expertise in providing solutions for high volume, mobile communications applications,” said Ulrich Hamann, Senior Vice President and General Manager of Infineon’s Wireless Group. “By addressing the specific requirements of higher operating frequencies, low noise figures, reduced power consumption and increased level of integration, the PMB2364 is an ideal device for mobile communication applications.”

The highly-integrated LNA feature very low noise figures of 1.3dB at 0.95 GHz and 1.5dB at 1.85 GHz with a gain of 19dB. It takes full advantage of the high performance B7HF process technology, which offers transition frequencies of up to 75 GHz. The PMB2364 IC also provides matched inputs/outputs and operates at a supply voltage from 2.7 to 3.6 V with very low current consumption. This integrated matching significantly reduces the number of external components compared to standard solutions.

The dual-band LNA IC can be combined with Infineons`s SMARTi, highly integrated GSM transceiver, to provide a complete front-end solution for mobile applications.

About the process


The B7HF technology has been specifically designed to meet requirements of mobile communication systems and high-speed data transmission standards. Beside the bipolar process option Infineon also provides highly integrated products with a SiGe BiCMOS process, which is called B7HFc using the same bipolar transistor. The SiGe processes enable innovative solutions for analog, mixed signal and high-level integrated RF products, such as Low Noise Amplifiers (LNA) Mixers, PLLs (up to 10 GHz), Transceivers and Analog/Digital Converter (ADC) circuits.

Availability


The PMB2364 is available in a very small P-TSSOP-10 in volume quantities.

About Infineon


Infineon Technologies AG, Munich, Germany, offers semiconductor and system solutions for applications in the wired and wireless communications markets, for security systems and smartcards, for the automotive and industrial sectors, as well as memory products. With a global presence, Infineon operates in the US from San Jose, CA, in the Asia-Pacific region from Singapore and in Japan from Tokyo. In the fiscal year 2000 (ending Septem-ber), the company achieved sales of Euro 7.28 billion with about 29,000 employees world-wide. Infineon is listed on the DAX index of the Frankfurt Stock Exchange and on the New York Stock Exchange (ticker symbol: IFX). Further information is available at www.infineon.com

Information Number

INFWS200105.081e

Press Photos

  • Infineon Technologies Introduces Dual-Band Low-Noise Amplifiers For GSM Phones; Now Available In Volume Quantities
    Infineon Technologies Introduces Dual-Band Low-Noise Amplifiers For GSM Phones; Now Available In Volume Quantities
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