Infineon Boosts DDR2 FB-DIMM Deployment: Designs and Manufactures All Key Components for Industry’s Next-Generation Server Memory Modules; Delivers AMB-Chip to FB-DIMM Manufacturers

Munich, Germany and San Francisco, USA – August 23, 2005 – At the Intel Developer Forum (IDF) in San Francisco today, Infineon Technologies AG (FSE/NYSE: IFX), a leading supplier of memory products, announced that it is sampling the industry’s only Double Data Rate 2 (DDR2) Fully Buffered Dual-In-line Memory Modules (FB-DIMMs) with all key components designed and manufactured by a single DRAM supplier. Available in densities ranging from 512MB (megabytes) to 4GB (gigabytes), the new FB-DIMMs are based on an Advanced Memory Buffer (AMB) chip, DDR2 DRAM chips and a proprietary heat sink all sourced from Infineon. Additionally, Infineon offers the AMB logic chip to other FB-DIMM manufacturers and has already shipped samples to first customers.

“Optimal production of the new modules requires innovation in three areas: high-density and high-speed DDR2 DRAM, the AMB chip, and heat sink to manage thermal load resulting from the combination of high memory density and the high-speed AMB chip,” said Michael Buckermann, Head of the Business Unit Computing of Infineon’s Memory Products Group. “Infineon’s full control of component and module production provides server manufacturers with a mature quality product and enables a smooth implementation of optimally aligned FB-DIMMs, as the technology is adopted to begin replacing Registered DIMMs in high-end server systems from 2006 onwards.”

FB-DIMMs change the parallel architecture of today’s Registered DIMMs into a serial point-to-point connection. This eliminates the throughput bottleneck of increased densities and speed grades of next-generation server memory. The Infineon designed and produced AMB, a highly complex logic chip controlling this point-to-point connection, offers a data rate of 4.8 Gbps (gigabits per second) as a high-speed link interfacing directly with the DDR2 DRAMs, which have speed grades of up to 800 Mbps (megabits per second) for this first generation. In addition to using it for its own modules, Infineon also delivers the AMB chip to other FB-DIMM manufacturers, boosting market penetration of the next generation server memory.

As a pioneer in FB-DIMM development, Infineon introduced the industry’s first AMB test chip in August 2004, and successfully demonstrated system boot-up on DDR2 platforms during IDF in February 2005. The current FB-DIMM generation announced today will use DDR2 DRAMs with speed grades of 533 and 667 Mbps, which will later be extended to 800 Mbps.

According to a recent report of market research firm iSuppli the 16 percent share of 4.2 million FB-DIMMs for the OEM server market in 2006 is expected to increase to 79 percent by 2008.

Customer samples of FB-DIMMs with densities of 512MB, 1GB, 2GB and 4GB based on 512Mbit and 1Gbit DDR2 533 and DDR2 667 components are available now. Volume production is planned for the fourth quarter of calendar year 2005.

The Infineon AMB chip with a data rate of up to 4.8 Gbps is offered in a 665-ball, high performance flip-chip BGA package. It is also available now in sample quantities.

For further information please go to: www.infineon.com/memory/fbdimm

Infineon Technologies AG, Munich, Germany, offers semiconductor and system solutions for automotive, industrial and multimarket sectors, for applications in communi-cation, as well as memory products. With a global presence, Infineon operates through its subsidiaries in the US from San Jose, CA, in the Asia-Pacific region from Singapore and in Japan from Tokyo. In fiscal year 2004 (ending September), the company achieved sales of Euro 7.19 billion with about 35,600 employees worldwide. Infineon is listed on the DAX index of the Frankfurt Stock Exchange and on the New York Stock Exchange (ticker symbol: IFX). Further information is available at www.infineon.com.